Anderson Janotti
Materials Department
University of California
Santa Barbara, CA 93106
Phone:(805)893-7499 Fax:(805)893-5029
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52 |
Hybrid functional
studies of oxygen vacancies in TiO2 A. Janotti, J. Varley, P. Rinke, N.
Umezawa, G. Kresse, and C.
G. Van de Walle |
Physical
Review B |
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51 |
First-principles investigations
of F and Cl impurities in NaAlH4 |
Journal of Alloys and Compounds, doi:10.1016/j.jallcom.2009.04.091 |
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50 |
Evolution of the electronic
structure of a ferromagnetic metal: Case of SrRuO3, P.
Mahadevan, F. Aryasetiawan, A. Janotti, and T. Sasaki |
Phys. Rev. B 80,
035106 (2009) |
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49 |
Defects formation
and diffusivity in NaAlH4 G. B. Wilson-Short, A. Janotti, and C.G. Van de Walle, |
Physical
Review B |
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48 |
Hydrogen interactions with acceptor impurities
in SnO2 J. Varley, A. Janotti, A. K.
Singh, and C. G. Van de Walle |
Phys. Rev. B Vol. 79,
245206 (2009) |
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47 |
Point defects in Al2O3 and their impact on gate stacks, J. Weber, A. Janotti, and C. G. Van de Walle |
Microelectronic
and Engineering, Vol. 86 pp. 1756-1759 (2009)
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46 |
Defect Formation
Energies without the Band-Gap Problem: Combining DFT and GW
for the Silicon Self-Interstitial P.
Rinke, A. Janotti, M. Scheffler, and C. G. Van de Walle |
Physical Review Letters, Vol. 102
026402 (2009) |
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45 |
Role of hydrogen at
germanium/dielectric interfaces C.G. Van de Walle, J.R. Weber, and A.
Janotti |
Thin
Solid Films Vol.
517 pp.144 (2008) |
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44 |
Atomic and
electronic structure of hydrogen-related centers in
hydrogen storage materials Chris G. Van de
Walle, A. Peles, A. Janotti and G. B. Wilson-Short |
Physica
B Vol.
44, pp. 793-797 (2009) |
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43 |
Sources of electrical conductivity in SnO2 A. K. Singh, A. Janotti, M.
Scheffler, and C. G. Van de Walle |
Physical Review Letters Vol. 101 pp. 55502
(2008) |
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42 |
Electrical activity of hydrogen impurities in
GaSb: First-principles calculations A. Peles, A. Janotti and C. G.
Van de Walle |
Physical Review B Vol. 78 pp. 35204
(2008) |
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41 |
Carbon-nitrogen molecules in GaAs and GaP S. Limpijumnong, P. Reunchan, A. Janotti,
and C. G. Van de Walle |
Physical Review B Vol.
77 pp. 195209 (2008) |
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40 |
Mutual passivation of electrically active and
isovalent impurities in dilute nitrides A. Janotti,
P. Reunchan, S. Limpijumnong, and C. G. Van de Walle |
Physical Review Letters Vol.
100 pp. 045505 (2008) |
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39 |
Optimizing optical absorption of TiO2 by
alloying with TiS2 N. Umezawa, A. Janotti, P.
Rinke, T. Chikyow, and C. G. Van de Walle |
Applied Physics Letters Vol.
92 pp. 041104 (2008) |
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38 |
Sources of unintentional conductivity in InN A. Janotti
and C. G. Van de Walle |
Applied Physics Letters Vol.
92 pp. 032104 (2008) |
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37 |
Native point defects in ZnO A. Janotti
and C. G. Van de Walle |
Physical Review B Vol.
76 pp. 165202 (2007) |
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36 |
Dangling-bond defects and hydrogen passivation
in germanium J. R. Weber, A. Janotti, P.
Rinke, C. G. Van de Walle |
Applied Physics Letters Vol. 91 pp. 142101
(2007) |
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35 |
Hydrogen
multicentre bonds A.
Janotti and C. G. Van de Walle |
Nature Materials Vol. 6
pp. 44 (2007) |
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34 |
Absolute deformation potentials and band
alignment of wurtzite ZnO, MgO, and CdO A. Janotti
and C. G. Van de Walle |
Phys. Rev. B (Rapid Comm.) Vol.
75 pp. 165202 (2007) |
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33 |
Self-consistent band-gap corrections in
density-functional theory using modified pseudopotentials D. Segev, A. Janotti, and C. G.
Van de Walle |
Phys.
Rev. B Vol.
75 pp. 035201 (2007) |
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32 |
Effects of cation d states on III-nitride and
II-oxide wide-band-gap semiconductors A. Janotti, D. Segev, and C. G. Van
de Walle |
Physical
Review B Vol.
74 pp. 045202 (2006) |
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31 |
Valency
configuration of transition metal impurities in ZnO L. Petit, T. C.
Schulthess, A. Svane, W. M. Temmerman, Z. Szotek, and A.
Janotti |
Journal
of Electronic Materials Vol.
35 pp. 556-561(2006) |
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30 |
Electronic structure of transition metal
impurities in p-type ZnO L. Petit, T. C. Schulthess, A. Svane, Z. Szotek,
W.M. Temmerman, and A. Janotti |
Physical
Review B Vol.
73 pp. 045107 (2006) |
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29 |
New insights into the role of native point
defects in ZnO A. Janotti and C. G. Van de Walle |
Journal
of Crystal Growth Vol.
287 pp. 58-65 (2006) |
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28 |
Intrinsic volume dependence of thermoinduced
magnetization in nanoparticles G. Brown, A. Janotti, M. E.
Eisenbach, G. M. Stocks |
Physical Review B (Rapid Comm.) Vol.
72 pp. 140405 (2005) |
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27 |
Oxygen vacancies in ZnO A. Janotti and C. G.
Van de Walle |
Applied Physics Letters Vol. 87 pp. 122102 (2005) |
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26 |
Diffusion rates of 3d transition metal solutes
in nickel by first-principles calculations M. Krcmar, C. L. Fu, A. Janotti,
and R. C. Reed |
Acta Materialia Vol. 53 pp. 2369-2376 (2005) |
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25 |
Vibrational and crystalline properties of
polymorphic CuInC2 (C=Se,S) chalcogenides J. Alvarez-Garcia, B. Barcones, A.
Perez-Rodriguez, J. R. Morante, A. Janotti, S.-H. Wei,
and R. Scheer |
Physical Review B Vol. 71 pp. 054303 (2005) |
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24 |
Physics of Defects and hydrogen in dilute
nitrides S. B. Zhang, A. Janotti, S.-H.
Wei, and C. G. Van de Walle |
IEE Proc.-Optoelectron. Vol. 151 pp. 369-377 (2004) |
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23 |
On the Diffusion of Alloying Elements in the
Nickel-Base Superalloys C. L. Fu, R. Reed, A. Janotti,
and M. Krcmar |
Superalloys 2004 pp. 867 |
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22 |
Solute diffusion in metals: Larger atoms can
move faster A. Janotti,
M. Krcmar, C. L. Fu, and R. C. Reed |
Physical Review Letters Vol. 92 085901 (2004) |
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21 |
Donor-donor binding in semiconductors:
Engineering shallow donor levels for ZnTe A. Janotti,
S.-H. Wei, and S.B. Zhang |
Applied Physics Letters Vol. 83 pp. 3522-3524 (2003) |
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20 |
Epitaxially stabilized AgGaSe2 for
high-efficiency spin-polarized electron source A. Janotti,
S.-H. Wei |
Journal of Physics and Chemistry of Solids Vol. 64 pp. 1881-1885 (2003) |
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19 |
Competition between ferromagnetism and
antiferromagnetism in FePt G. Brown, B. Kraczek, A. Janotti,
T. C. Schulthess, G. M. Stocks, and D. D. Johnson |
Physical Review B Vol. 68 pp. 052405 (2003) |
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18 |
Interactions between nitrogen, hydrogen, and
gallium vacancies in GaAsN alloys A. Janotti,
S.-H. Wei, S. B. Zhang, S. Kurtz, and C. G. Van de Walle |
Physical Review B (Rapid Comm.) Vol. 67 pp. 161201 (2003) |
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17 |
Electronic and magnetic properties of MnN versus
MnAs A. Janotti,
S.-H. Wei, and L. Bellaiche |
Applied Physics Letters Vol.
82 pp. 766-768 (2003) |
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16 |
Computational design of a material for
high-efficiency spin-polarized electron source A. Janotti
and S.-H. Wei |
Applied Physics Letters Vol.
81 pp. 3957-3959
(2002) |
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15 |
Effects of hydrogen on the electronic properties
of dilute GaAsN alloys A. Janotti,
S. B. Zhang, S.-H. Wei, and C. G. van de Walle |
Physical Review Letters Vol. 89 pp. 086403 (2002) |
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14 |
Hydrogen vibration modes in GaP : N: The pivotal
role of nitrogen in stabilizing the H2* complex A. Janotti,
S. B. Zhang, and S.-H. Wei |
Physical Review Letters Vol. 88 pp. 125506 (2002) |
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13 |
Theoretical study of the effects of isovalent
co-alloying of Bi and N in GaAs A. Janotti,
S.-H. Wei, and S. B. Zhang |
Physical Review B Vol. 65 pp. 115203 (2002) |
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12 |
Polymorphism in CuInS2 epilayers:
Origin of additional Raman modes J. Alvarez-Garcia, A. Perez-Rodriguez, B.
Barcones, A. Romano-Rodrigues, J. R. Morante, A. Janotti,
S.-H. Wei, and R. Scheer |
Applied Physics Letters Vol.
80 pp. 562-564 (2002) |
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11 |
First-principles study of the stability of BN
and C A. Janotti,
S.-H. Wei, and D. J. Singh |
Physical Review B Vol. 64 pp. 174107 (2001) |
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10 |
Two-atom structures of Ge on Si(100): Dimers
versus adatom pairs A. J. R. da Silva, G. M. Dalpian, A.
Janotti, and A. Fazzio |
Physical Review Letters Vol. 87 pp. 036104 (2001) |
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9 |
Structural and electronic properties of ZnGeAs2
A. Janotti,
S.-H. Wei, S. B. Zhang, and S. Kurtz |
Physical Review B Vol. 63 pp. 195210 (2001) |
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8 |
Self-interstitial defect in germanium A. J. R. da Silva, A. Janotti,
A. Fazzio. R. Baierle, and R. Mota |
Physical Review B Vol. 62 pp. 9903-9906 (2000) |
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7 |
Microscopic picture of the single vacancy in
germanium A.
Fazzio, A. Janotti, A. J. R. da Silva, and R. Mota |
Physical Review B (Rapid Comm.) Vol. 62 pp. 2401-2404 (2000) |
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6 |
Electronic and structural properties of vacancy
and self-interstitial defects in germanium A. Janotti, R. Baiele, A. J. R. da
Silva, A. Fazzio, and R. Mota |
Physica
B Vol.
274 pp. 575-578 (1999) |
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5 |
Initial
stages of Ge growth on Si(001): ad-atoms, ad-dimers, and ad-trimers G.
M. Dalpian, A. Janotti, A. Fazzio, and A. J. R. da
Silva |
Physica
B Vol.
274 pp. 589-592 (1999) |
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4 |
Concerted-exchange mechanism for antistructure
defects in GaAs A. Janotti, A. Fazzio, R. Mota, and
P. Piquini |
Solid
State Communications Vol.
110 pp. 457-461 |
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3 |
Theoretical study of defect complexes related
with antisites in GaAs A.
Fazzio, A. Janotti,R. Mota, and P. Piquini |
Rad.
Eff. Defect. Sol. Vol.
146 pp. 65 (1998) |
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2 |
Theoretical
study of antistructure defects in GaAs A. Janotti, A. Fazzio, P. Piquini,
and R. Mota |
Materials Science Forum Vol. 258-2 pp. 975-979 (1997) |
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1 |
Defect complexes in GaAs: First-principles
calculations A. Janotti, A. Fazzio, P. Piquini,
and R. Mota |
Physical Review B Vol. 56 pp. 13073-13076 (1997) |
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BOOK
CHAPTERS |
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1 |
Theory of native point defects and impurities in InN A. Janotti and C. G. Van de Walle, Indium
Nitride and Related Alloys, edited by T. Veal and W.
J. Schaff, (CRC Press, 2008), ISBN:1420078097 |
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2 |
Native point defects
and doping in ZnO A. Janotti and C. G. Van de Walle ZnO Materials for Electronic and Optoelectronic Device Applications, edited by C. W. Litton, D. C. Reynolds, and T. C. Collins, (Wiley, 2009). |
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ConferEnce Proceedings |
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1 |
(Invited) Hydrogen-Nitrogen Tailors Semiconductor Optoelectronics: The Case of Dilute Nitride III-V Alloys A. Janotti in Hydrogen in
Semiconductors, edited by N. H. Nickel, M. D. McCluskey, and S. B. Zhang, (Mat. Res. Society Sym. Proc.
813, Warrendale, PA, 2004), pp. 123 |
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